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SOURCE Research and Markets
DUBLIN, April 30, 2014 /PRNewswire/ --
Research and Markets (http://www.researchandmarkets.com/research/hhlgfs/infineon_coolmos) have announced the addition of the "Infineon CoolMOS C7 Technology Analysis" report to their offering.
(Logo: http://photos.prnewswire.com/prnh/20130307/600769 )
7th generation Superjunction MOSFET
The CoolMOS C7 from Infineon is the 7th generation high-voltage Superjunction structure power MOSFET. With a breakdown voltage of 650V for a current of 7A (100°C), the C7 is optimized for hard switching topologies such as Power Factor Correction, solar boost circuit applications.
The CoolMOSTM C7 offers a very low on-resistance (between 19m? and 225m?), and a fast switching speed, more than 100KHz. The C7 differs from the C6 via a new multi-epitaxy technology and an original contact solution.
The Technology Analysis report contains only Physical Analysis & Manufacturing Process Flow. A full reverse costing analysis is also available, for more information please click on the link below.
Key Topics Covered:
1. Overview / Introduction
2. Companies Profile
3. IPD65R225C7 Characteristics
4. IPD65R225C7 Physical Analysis
Physical Analysis Methodology
Package Views & Dimensions
Die View, Dimensions & Marking
Gate Supply Line
Source and Gate
Substrate and Epitaxy Layers
5. Manufacturing Process Flow
MOSFET Front end Unit
MOSFET Tests Unit
Transistor Process Flow
For more information visit http://www.researchandmarkets.com/research/hhlgfs/infineon_coolmos
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